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參數(shù)資料
| 型號(hào)： | AAT9060INY-T1 |
| 廠商： | Advanced Analogic Technologies, Inc. |
| 英文描述： | 30V N-Channel Power MOSFET |
| 中文描述： | 30V的N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | AAT9060INY-T1 |
AAT9060
30V N-Channel Power MOSFET
P
9060.2003.05.0.9
1
PWMSwitch
General Description
The AAT9060 30V N-Channel Power MOSFET is a
member of AnalogicTech's TrenchDMOS
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, this product
demonstrates high power handling and small size.
Applications
DC-DC converters
High current load switches
LDO output
Features
V
DS(MAX)
= 30V
I
D(MAX)
I
APP(MAX)
= 12.5A in typical computer application
Low R
DS(ON)
:
16 m
@V
GS
= 10V
27 m
@V
GS
= 4.5V
1
= 39A @ T
C
= 25°C
DPAK Package
G
S
Drain-Connected Tab
Absolute Maximum Ratings
(T
C
=25°C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Value
Units
R
θ
JA
R
TYP
R
θ
JC
Maximum Junction-to-Ambient
Typical Junction to ambient on PC board
2
Maximum Junction-to-Case
96
24
3
°C/W
°C/W
°C/W
Symbol
Description
Value
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
30
±20
±39
±31
±60
20
41
26
V
I
D
Continuous Drain Current @ T
J
=150°C
1
T
C
= 25°C
T
C
= 70°C
I
DM
I
S
Pulsed Drain Current
3
Continuous Source Current (Source-Drain Diode)
1
A
P
D
Maximum Power Dissipation
1
T
C
= 25°C
T
C
= 70°C
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
°C
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