參數(shù)資料
型號: AAT7357ITS-T1
廠商: Advanced Analogic Technologies, Inc.
英文描述: 20V P-Channel Power MOSFET
中文描述: 20V的P溝道功率MOSFET
文件頁數(shù): 1/6頁
文件大小: 207K
代理商: AAT7357ITS-T1
General Description
The AAT7357 is a low threshold dual MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTech's ultra high density
MOSFET process and space saving small outline J-
lead package, performance superior to that normal-
ly found in a TSSOP-8 footprint has been squeezed
into the footprint of a TSOPJW-8 package.
Applications
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Features
V
DS(MAX)
= -20V
I
D(MAX)
Low R
DS(ON)
:
39 m
@ V
GS
= -4.5V
63 m
@ V
GS
= -2.5V
1
= -5A @ 25°C
Dual TSOPJW-8 Package
D1
D1
D2
D2
S1
G1
S2
G2
Top View
1
2
3
4
8
7
6
5
AAT7357
20V P-Channel Power MOSFET
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Typ
Max
Units
R
θ
JA
R
θ
JA2
R
θ
JF
Junction-to-Ambient steady state, one FET on
1
Junction-to-Ambient t<5 seconds
1
Junction-to-Foot
1
115
64
60
140
78
72
°C/W
°C/W
°C/W
Symbol
Description
Value
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
-20
±12
±5
±4
±12
-1.3
1.6
1.0
V
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C
T
A
= 70°C
A
I
DM
I
S
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
1
P
D
Maximum Power Dissipation
1
T
A
= 25°C
T
A
= 70°C
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
°C
A
7357.2003.08.0.6
1
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