參數(shù)資料
型號(hào)： AAT7157IAS-T1
廠商： Advanced Analogic Technologies, Inc.
英文描述： 20V P-Channel Power MOSFET
中文描述： 20V的P溝道功率MOSFET
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 133K
代理商： AAT7157IAS-T1
AAT7157
20V P-Channel Power MOSFET
7157.2004.04.1.0
1
General Description
The AAT7157 low threshold 20V, dual P-Channel
MOSFET is a member of AnalogicTech's
TrenchDMOS product family. Using an ultra-high
density proprietary TrenchDMOS technology the
AAT7157 is designed for use as a load switch in
battery powered applications and protection in bat-
tery packs.
Applications
Battery Packs
Battery-powered portable equipment
Features
V
DS(MAX)
= -20V
I
D(MAX)
Low R
DS(ON)
:
36 m
@ V
GS
= -4.5V
62 m
@ V
GS
= -2.5V
1
= -5.8A @ 25°C
Dual SOP-8L Package
D1
D1
D2
D2
S1
G1
S2
G2
Top View
1
2
3
4
8
7
6
5
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Value
Units
R
θ
JA
R
θ
JA2
R
θ
JF
Typical Junction-to-Ambient steady state
1
Maximum Junction-to-Ambient t<10 seconds
1
Typical Junction-to-Foot
1
100
62.5
35
°C/W
Symbol
Description
Value
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
-20
±12
±5.8
±4.6
±24
-1.5
2.0
1.25
V
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C
T
A
= 70°C
A
I
DM
I
S
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
1
P
D
Maximum Power Dissipation
1
T
A
= 25°C
T
A
= 70°C
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
°C
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