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參數(shù)資料
| 型號(hào)： | AAT7126 |
| 廠商： | Advanced Analogic Technologies, Inc. |
| 英文描述： | Quad-Output LNA with AGC for Cable TV Applications |
| 中文描述： | 30V的N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 127K |
| 代理商： | AAT7126 |
General Description
The AAT7126 30V N-Channel Power MOSFET is a
member of AnalogicTech's TrenchDMOS
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, this product
demonstrates high power handling and small size.
Applications
Battery-powered portable equipment
Laptop computers
Desktop computers
DC/DC converters
Features
V
DS(MAX)
= 30V
I
D(MAX)
Low R
DS(ON)
:
26 m
@V
GS
= 10V
41 m
@ V
GS
= 4.5V
1
= 6.8A @ 25°C
Dual SOP-8 Package
D1
D1
D2
D2
S1
G1
S2
G2
Top View
1
2
3
4
8
7
6
5
AAT7126
30V N-Channel Power MOSFET
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Value
Units
R
θ
JA
R
θ
JA2
R
Θ
JC
Typical Junction-to-Ambient steady state, one FET on
Industry Standard Junction-to-Ambient Figure, t < 10 sec.
Typical Junction-to-Case, one FET on
100
62.5
35
°C/W
°C/W
°C/W
Symbol
Description
Value
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
30
±20
±6.8
±5.4
±24
1.7
2.0
1.25
V
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C
T
A
= 70°C
A
I
DM
I
S
Pulsed Drain Current
Continuous Source Current (Source-Drain Diode)
1
P
D
Maximum Power Dissipation
1
T
A
= 25°C
T
A
= 70°C
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
°C
P
7126.2002.10.0.9
1
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