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參數(shù)資料
| 型號(hào)： | A63G7332E-45 |
| 廠商： | AMIC Technology Corporation |
| 元件分類： | 通用總線功能 |
| 英文描述： | 128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output |
| 中文描述： | 128K的× 32位同步高的Burst計(jì)數(shù)器和流水線數(shù)據(jù)輸出高速SRAM |
| 文件頁數(shù)： | 9/17頁 |
| 文件大小： | 382K |
| 代理商： | A63G7332E-45 |
A63G7332 Series
PRELIMINARY (December, 1998, Version 2.1)
8
AMIC Technology, Inc.
DC Electrical Characteristics
(0
°
C
≤
T
A
≤
70
°
C, VCC = 3.3V+10% or 3.3V-5%, VCCQ = +2.5V+0.4V/-0.125V, unless otherwise noted)
Symbol
Parameter
Min.
Max.
Unit
Test Conditions
Note
I
LI
Input Leakage Current
-
±
2.0
μ
A
All inputs V
IN
= GND to VCC
I
LO
Output Leakage Current
-
±
2.0
μ
A
OE
= V
IH
, Vout = GND to VCC
I
CC1
Supply Current
-
300
mA
Device selected; VCC = max.
Iout = 0mA, all inputs = V
IH
or V
IL
Cycle time = t
KC
min.
3, 11
I
SB1
Standby Current
-
25
mA
Device deselected; VCC = max.
All inputs are fixed.
All inputs
≥
VCC - 0.2V
or
≤
GND + 0.2V
Cycle time = t
KC
min.
11
I
SB2
-
10
mA
ZZ
≥
VCC - 0.2V
V
OL
Output Low Voltage
-
0.7
V
I
OL
= 2.0 mA
-
0.4
V
I
OL
= 1.0 mA
V
OH
Output High Voltage
1.7
-
V
I
OH
= -2.0 mA
2.0
-
V
I
OH
= -1.0 mA
Capacitance
Symbol
Parameter
Typ.
Max.
Unit
Conditions
C
IN
Input Capacitance
3
4
pF
T
A
= 25 C; f = 1MHz
VCC = 3.3V
C
I/O
Input/Output Capacitance
4
5
pF
* These parameters are sampled and not 100% tested.
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