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參數(shù)資料
| 型號： | A23W8308 |
| 英文描述： | 262.144 X 8 BIT CMOS MASK ROM |
| 中文描述： | 262.144 × 8位CMOS掩膜ROM |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 190K |
| 代理商： | A23W8308 |
A23W8308
PRELIMINARY (November, 1999, Version 0.0)
4
AMIC Technology, Inc.
Absolute Maximum Ratings*
Ambient Operating Temperature . . . . . . . -10
°
C to + 80
°
C
Storage Temperature . . . . . . . . . . . . . . -65
°
C to + 150
°
C
Supply Voltage to Ground Potential . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to + 7.0V
Output Voltage . . . . . . . . . . . . . . . . . -0.5V to VCC + 0.5V
Input Voltage . . . . . . . . . . . . . . . . . . -0.5V to VCC + 0.5V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . 400mW
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics
(T
A
= 0
°
C to + 70
°
C, GND = 0V)
Symbol
Parameter
5.0V
±
10%
3.0V
±
10%
Unit
Conditions
Note
Min.
Max.
Min.
Max.
V
OH
Output High
Voltage
2.4
2.15
V
I
OH
= -1mA (5V)
I
OH
= -0.4mA (3V)
V
OL
Output Low
Voltage
0.4
0.4
V
I
OL
= 3.2mA (5V)
I
OL
= 1.6mA (3V)
V
lH
Input High
Voltage
2.2
VCC + 0.3
0.7 * VCC
VCC+0.5
V
V
lL
Input Low
Voltage
-0.5
0.8
-0.5
0.6
V
l
LI
Input Leakage
Current
+10
+5
μ
A
VCC = max.
V
IN
= VCC to GND
l
LO
Output Leakage
Current
+10
+5
μ
A
VCC = max.
V
OUT
= VCC to GND
1
I
CC
Operating
Supply Current
50
15
mA
t
CYC
= min.
2
I
SB
Standby Supply
Current (TTL)
1.5
0.5
mA
CE
= V
IH
, CE = V
IL
I
SB1
Standby Supply
Current (CMOS)
50
25
μ
A
CE
= VCC - 0.2V,
CE = 0.2V
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