參數(shù)資料
型號(hào): A1351LKTTN-T
廠商: Allegro Microsystems Inc
文件頁(yè)數(shù): 10/24頁(yè)
文件大?。?/td> 663K
描述: IC SENSOR HALL EFFECT 4-SIP
產(chǎn)品培訓(xùn)模塊: Current Sensor
標(biāo)準(zhǔn)包裝: 1
傳感范圍: 0.055% ~ 0.095% DC/G
類型: 線性 - 單極,雙極
電源電壓: 4.5 V ~ 5.5 V
電流 - 電源: 10mA
電流 - 輸出(最大): 1mA
輸出類型: 數(shù)字,推挽式
特點(diǎn): 高精度
工作溫度: -40°C ~ 125°C
封裝/外殼: 4-SIP
供應(yīng)商設(shè)備封裝: 4-SIP
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁(yè)面: 1139 (CN2011-ZH PDF)
其它名稱: 620-1228-6
A1351
High Precision Linear Hall Effect Sensor IC
 with a Push/Pull, Pulse Width Modulated Output
9
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
and for unipolar devices as:
 
D
(BPOS)
 D
(Q)
BPOS
Sens
=
,
 
(5)
where BPOS and BNEG are two magnetic fields with opposite
polarities.
Guaranteed Sensitivity Range The magnetic sensitivity, Sens, 
can be programmed around its nominal value within the sensitiv-
ity range limits: Sens(min) and Sens(max). Refer to the Guaran-
teed Quiescent Duty Cycle Output Range section for a conceptual
explanation of how value distributions and ranges are related.
Average Sensitivity Step Size Refer to the Average Quiescent 
Duty Cycle Output Step Size section for a conceptual explana-
tion.
Sensitivity Programming Resolution Refer to the Quiescent 
Duty Cycle Output Programming Resolution section for a con-
ceptual explanation.
Carrier Frequency Programming Range The PWM output sig-
nal carrier frequency, f
PWM
 ,can be programmed around its nomi-
nal value within the carrier frequency range limits, f
PWM
(min)
and f
PWM
(max). Refer to the Guaranteed Quiescent Duty Cycle
Output Range section for a conceptual explanation of how value
distributions and ranges are related.
Average Carrier Frequency Step Size Refer to the Average 
Quiescent Duty Cycle Output Step Size section for a conceptual
explanation.
Carrier Frequency Programming Resolution Refer to the Qui-
escent Duty Cycle Output Programming Resolution section for a
conceptual explanation.
Sensitivity Temperature Coefficient Device sensitivity changes 
as temperature changes, with respect to its programmed sensitiv-
ity temperature coefficient, TC
SENS
. TC
SENS
 is programmed at
125癈, and calculated relative to the nominal sensitivity program-
ming temperature of 25癈. TC
SENS
 (%/癈) is defined as:
 
Sens
T2
 Sens
T1
Sens
T1
T2T1
1
TC
Sens
=
?SPAN class="pst A1351LKTTN-T_2172462_2"> 
100%
,
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
 
(6)
where T1 is the nominal Sens programming temperature of 25癈,
and T2 is the TC
SENS
 programming temperature of 125癈. The
ideal value of Sens over the full ambient temperature range,
Sens
EXPECTED(TA)
, is defined as:
 
Sens
T1
 [1 + TC
SENS
 (T
A
T1) / 100%]
Sens
EXPECTED(TA)
=
 
(7)
Sens
EXPECTED(TA)
 should be calculated using the actual measured
values of Sens
T1
 and TC
SENS
 rather than programming target values.
Sensitivity Drift Through Temperature Range Second order 
sensitivity temperature coefficient effects cause the magnetic sen-
sitivity, Sens, to drift from its expected value over the operating
ambient temperature range, T
A
. For purposes of specification, the
sensitivity drift through temperature range, Sens
TC
, is defined
as:
 
Sens
TA
 Sens
EXPECTED(TA)
Sens
EXPECTED(TA)
Sens
TC
=
?SPAN class="pst A1351LKTTN-T_2172462_2"> 
100% .
 
(8)
Sensitivity Drift Due to Package Hysteresis Package stress and 
relaxation can cause the device sensitivity at T
A
 = 25癈 to change
during and after temperature cycling.
For purposes of specification, the sensitivity drift due to package
hysteresis, Sens
PKG
, is defined as:
 
Sens
(25癈)2
 Sens
(25癈)1
Sens
(25癈)1
Sens
PKG
=
?SPAN class="pst A1351LKTTN-T_2172462_2"> 
100% ,
 
(9)
where Sens
(25癈)1
 is the programmed value of sensitiv-
ity at T
A
 = 25癈, and Sens
(25癈)2
 is the value of sensitivity at
T
A
 = 25癈, after temperature cycling T
A
 up to 125癈, down to
40癈, and back to up 25癈.
Linearity Sensitivity Error The 1351 is designed to provide a 
linear output in response to a ramping applied magnetic field.
Consider two magnetic fields, B1 and B2. Ideally, the sensitivity
of a device is the same for both fields, for a given supply voltage
and temperature. Linearity error is present when there is a differ-
ence between the sensitivities measured at B1 and B2.
Linearity Error is calculated separately for the positive
(Lin
ERRPOS
) and negative (Lin
ERRNEG
) applied magnetic fields.
Linearity error (%) is measured and defined as:
 
Sens
BPOS2
Sens
BPOS1
Sens
BNEG2
Sens
BNEG1
1
Lin
ERRPOS
=
?SPAN class="pst A1351LKTTN-T_2172462_2"> 
100%
,
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
1
Lin
ERRNEG
=
?SPAN class="pst A1351LKTTN-T_2172462_2"> 
100% ,
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
 
(10)
where:
 
|D
(Bx)

 D
(Q)
|
B
x
Sens
Bx
=
,
 
(11)
and B
POSx
 and B
NEGx
 are positive and negative magnetic fields,
with respect to the quiescent voltage output such that
B
POS2
 = 2 ?B
POS1
 and B
NEG2
 = 2 譈
NEG1
. Then:
 
Lin
ERR
max( Lin
ERRPOS
 , Lin
ERRNEG
)
=
.
 
(12)
Note that unipolar devices only have positive linearity error,
Lin
ERRPOS
.
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