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參數(shù)資料
| 型號(hào)： | 992215732011 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 模擬信號(hào)調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, CDIP32 |
| 封裝： | CERAMIC, DIP-32 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 234K |
| 代理商： | 992215732011 |
2000 January
12
Philips Semiconductors
Product specification
Frame Transfer CCD Image Sensor
FT 18
Figure 6 - Application diagram to protect the FT 18
Device Handling
An image sensor is a MOS device which can be destroyed by electro-
static discharge (ESD). Therefore, the device should be handled
with care.
Always store the device with short-circuiting clamps or on conductive
foam. Always switch off all electric signals when inserting or removing
the sensor into or from a camera (the ESD protection in the CCD
image sensor process is less effective than the ESD protection of
standard CMOS circuits).
Being a high quality optical device, it is important that the cover
glass remain undamaged. When handling the sensor, use fingercots.
When cleaning the glass we recommend using ethanol (or possibly
water). Use of other liquids is strongly discouraged:
if the cleaning liquid evaporates too quickly, rubbing is likely to
cause ESD damage.
the cover glass and its coating can be damaged by other liquids.
Rub the window carefully and slowly.
Dry rubbing of the window may cause electro-static charges or
scratches which can destroy the device.
BAT74
Schottky!
VPS
SFD
VRD
BC
860C
BC
850C
VNS
100nF
BC
850C
0.5-1mA
27
15
10k
0.5-1mA
VCS
VOG
10k
OUT
<7pF!
keep short
<10mm!
keep short!
output for
preprocessing
BFR
92A
1k
3.3k
10mA
100nF
BAT74
0.5-1mA
BAT74
Schottky!
100
VSFD
100nF
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