參數(shù)資料
型號: 935030700602
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: SOT109-1, MS-012AC, SO-16
文件頁數(shù): 20/20頁
文件大?。?/td> 272K
代理商: 935030700602
Philips Semiconductors
Product specification
SA5209
Wideband variable gain amplifier
1997 Nov 07
9
S
Magnitude
10
0
0.6
1
0.8
0.4
0.2
VCC = 5.5V
VCC = 5.0V
VCC = 4.5V
VAGC (V)
21
9
8
7
6
5
4
3
2
1
0
1.2
T = 25
°C
RS = RL = 50
Rt =
f = 10MHz
DC Tested
See test-setup 1
SR00251
Figure 15. Gain vs VAGC and VCC
RS = RL = 50
Rt =
See test-setup 1
0
0.2
0.4
0.6
0.8
VAGC (V)
10
9
8
7
6
5
4
3
2
1
0
1
1.2
-55
°C
+25
°C
+125
°C
S
Magnitude
21
SR00253
Figure 16. Insertion Gain vs VAGC and Temperature
20
Differential
V
oltage
Gain
(dB)
Temperature (
°C)
–100
50
150
100
0
–50
5.5V
5.0V
4.5V
19.5
19
18.5
18
17.5
17
16.5
16
15.5
15
RS = 0
RL =
Rt =
VAGC = 1.1V
See Test Setup 1
SR00252
Figure 17. Voltage Gain vs Temperature and VCC
Supply
Current
(mA)
–100
–50
0
50
100
55
50
45
40
35
30
25
20
150
VCC = 7.0V
See test-setup 1
Temperature (
°C)
VCC = 6.0V
VCC = 5.0V
VCC = 4.5V
SR00254
Figure 18. Supply Current vs Temperature and VCC
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