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參數(shù)資料
| 型號： | 935030700602 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | SOT109-1, MS-012AC, SO-16 |
| 文件頁數(shù)： | 18/20頁 |
| 文件大?。?/td> | 272K |
| 代理商： | 935030700602 |
Philips Semiconductors
Product specification
SA5209
Wideband variable gain amplifier
1997 Nov 07
7
This circuit will exhibit about a 7dB
noise
figure
with
approximately
22dB
gain.
Narrowband
circuits
have the advantage of greater stabil-
ity, particularly when multiple de-
vices are cascaded.
50
50
50
+5V
+1V
2:1 TURNS RATIO
LC TUNED
TRANSFORMER
SOURCE
OUTPUT
5209
VAGC
SR00242
Figure 6. Narrowband Noise Optimization
This circuit will exhibit about an 8dB
noise figure with 24dB gain.
50
50
50
+5V
+1V
MINI CIRCUITS
4:1 BALUN OR
EQUIVALENT
SOURCE
OUTPUT
5209
1 : 4
VAGC
SR00243
Figure 7. Broadband Gain Optimization
This circuit will exhibit approximate-
ly an 8dB noise figure and 25dB gain.
50
50
50
+5V
+1V
4:1 TURNS RATIO
LC TUNED
TRANSFORMER
SOURCE
OUTPUT
5209
VAGC
SR00244
Figure 8. Narrowband Gain Optimization
The noise figure of this configuration
will be approximately 15dB.
50
50
50
+5V
+1V
OUTPUT
5209
50
VAGC
SR00245
Figure 9. Simple Amplifier Configuration
With the 50
source left untermi-
nated, the noise figure is 9dB.
50
50
50
+5V
+1V
SOURCE
OUTPUT
5209
VAGC
SR00246
Figure 10. Unterminated Configuration
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