參數資料
型號： 935030700602
廠商： NXP SEMICONDUCTORS
元件分類： 放大器
英文描述： RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： SOT109-1, MS-012AC, SO-16
文件頁數： 15/20頁
文件大?。?/td> 272K
代理商： 935030700602
Philips Semiconductors
Product specification
SA5209
Wideband variable gain amplifier
1997 Nov 07
4
DC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5.0V, VAGC = 1.0V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RBG
Bandgap loading
Over temperature1
2
10
k
VAGC
AGC DC control voltage range
Over temperature1
0-1.3
V
IBAGC
AGC pin DC bias current
0V<VAGC<1.3V
-0.7
-6
A
IBAGC
AGC in DC bias current
Over temperature1
-10
A
NOTES:
1. “Over Temperature Range” testing is as follows:
SA is -40 to +85
°C
At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature
testing only.
AC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5.0V, VAGC = 1.0V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BW
-3dB bandwidth
600
850
MHz
BW
-3dB bandwidth
Over temperature1
500
MHz
GF
Gain flatness
DC - 500MHz
+0.4
dB
GF
Gain flatness
Over temperature1
+0.6
dB
VIMAX
Maximum input voltage swing (single-ended) for
linear operation2
200
mVP-P
VOMAX
Maximum output voltage swing (single-ended)
RL = 50
400
mVP-P
VOMAX
for linear operation2
RL = 1k
1.9
VP-P
NF
Noise figure (unmatched configuration)
RS = 50, f = 50MHz
9.3
dB
VIN-EQ
Equivalent input noise voltage spectral density
f = 100MHz
2.5
nV/
√Hz
S12
Reverse isolation
f = 100MHz
-60
dB
G/VCC
Gain supply sensitivity (single-ended)
0.3
dB/V
G/T
Gain temperature sensitivity
RL = 50
0.013
dB/
°C
CIN
Input capacitance (single-ended)
2
pF
BWAGC
-3dB bandwidth of gain control function
20
MHz
PO-1dB
1dB gain compression point at output
f = 100MHz
-3
dBm
PI-1dB
1dB gain compression point at input
f = 100MHz, VAGC
=0.1V
-10
dBm
IP3OUT
Third-order intercept point at output
f = 100MHz, VAGC
>0.5V
+13
dBm
IP3IN
Third-order intercept point at input
f = 100MHz, VAGC
<0.5V
+5
dBm
GAB
Gain match output A to output B
f = 100MHz, VAGC = 1V
0.1
dB
NOTE:
1. “Over Temperature Range” testing is as follows:
SA is -40 to +85
°C
At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature
testing only.
2. With RL > 1k, overload occurs at input for single-ended gain < 13dB and at output for single-ended gain > 13dB. With RL = 50, overload
occurs at input for single-ended gain < 6dB and at output for single-ended gain > 6dB.
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