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參數(shù)資料
| 型號(hào)： | 934057002127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 4 A, 400 V, SCR, TO-126 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 65K |
| 代理商： | 934057002127 |
July 2001
5
Rev 1.000
Philips Semiconductors
Product specication
Thyristors logic level
MCR106-6
Fig.7. Normalised gate trigger current
I
GT(Tj)/ IGT(25C), versus junction temperature Tj.
Fig.8. Normalised latching current I
L(Tj)/ IL(25C),
versus junction temperature T
j.
Fig.9. Normalised holding current I
H(Tj)/ IH(25C),
versus junction temperature T
j.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb, versus
pulse width t
p.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D/dt versus junction temperature Tj.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
12
typ
VT / V
IT / A
max
Tj = 125 C
Tj = 25 C
Vo = 1.26 V
Rs = 0.099 ohms
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
0.01
0.1
1
10
tp / s
Zth j-mb (K/W)
t
p
P
t
D
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25 C)
0
50
100
150
1
10
100
1000
Tj / C
dVD/dt (V/us)
RGK = 100 ohms
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