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參數(shù)資料
| 型號： | 934057002127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 4 A, 400 V, SCR, TO-126 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 934057002127 |
July 2001
4
Rev 1.000
Philips Semiconductors
Product specication
Thyristors logic level
MCR106-6
Fig.1. Maximum on-state dissipation, P
tot, versus
average on-state current, I
T(AV), where
a = form factor = I
T(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p ≤ 10ms.
Fig.3. Maximum permissible rms current I
T(RMS) ,
versus mounting base temperature T
mb.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb ≤ 113C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT(25C), versus junction temperature Tj.
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
a = 1.57
1.9
2.2
2.8
4
IF(AV) / A
Ptot / W
Tmb(max) / C
125
122.5
120
117.5
115
112.5
110
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
1
1000
0
10
20
30
40
10
100
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
T
Tj initial = 25 C max
10
100
1000 ITSM / A
10us
100us
1ms
10ms
T / s
time
T
Tj initial = 25 C max
T
I
ITSM
dI /dt limit
T
0.01
0.1
1
10
0
2
4
6
8
10
12
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
1
2
3
4
5
BT148
Tmb / C
IT(RMS) / A
113 C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
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