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參數(shù)資料
| 型號： | 934057002127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 4 A, 400 V, SCR, TO-126 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 934057002127 |
July 2001
3
Rev 1.000
Philips Semiconductors
Product specication
Thyristors logic level
MCR106-6
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
-
2.5
K/W
junction to mounting base
R
th j-a
Thermal resistance
in free air
-
95
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
-
15
200
A
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
-
0.17
10
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
0.10
6
mA
V
T
On-state voltage
I
T = 5 A
-
1.23
1.8
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.4
1.5
V
D = VDRM(max); IT = 0.1 A; Tj = 110 C
0.1
0.2
-
V
I
D, IR
Off-state leakage current
V
D = VDRM(max); VR = VRRM(max); Tj = 125 C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max); Tj = 125 C;
-
50
-
V/
s
off-state voltage
exponential waveform; R
GK = 100
t
gt
Gate controlled turn-on
I
TM = 10 A; VD = VDRM(max); IG = 5 mA;
-
2
-
s
time
dI
G/dt = 0.2 A/s
t
q
Circuit commutated
V
D = 67% VDRM(max); Tj = 125 C; ITM = 8 A;
-
100
-
s
turn-off time
V
R = 10 V; dITM/dt = 10 A/s;
dV
D/dt = 2 V/s; RGK = 1 k
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