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參數(shù)資料
| 型號： | 934056789118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, LFPAK-5 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 224K |
| 代理商： | 934056789118 |
Philips Semiconductors
PH5330
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 07 February 2002
6 of 12
9397 750 09391
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ag89
0
20
40
60
80
012
345
VDS (V)
ID
(A)
3.5 V
VGS = 3 V
10 V
4 V
4.5 V
03ag90
0
20
40
60
80
01234
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25 C
150 C
03ag95
0
0.01
0.02
0.03
0
204060
ID (A)
RDSon
(
)
3 V
VGS = 3.5 V
4.5 V
10 V
4 V
03ah32
0
0.6
1.2
1.8
-80
-20
40
100
160
Tj (C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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