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參數(shù)資料
| 型號： | 934056789118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, LFPAK-5 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 224K |
| 代理商： | 934056789118 |
Philips Semiconductors
PH5330
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 07 February 2002
7 of 12
9397 750 09391
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj = 25 °C and 150 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03ah33
0
1
2
3
-80
-20
40
100
160
Tj (C)
VGS(th)
(V)
min
typ
max
03ah30
10-7
10-5
10-3
10-1
10
01
23
VGS (V)
ID
(A)
min
typ
max
03ag91
0
20
40
60
80
0
20406080
ID (A)
gfs
(S)
Tj = 25 C
150 C
VDS > ID x RDSon
03ag93
102
103
104
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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