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參數(shù)資料
| 型號： | 934056789118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, LFPAK-5 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 224K |
| 代理商： | 934056789118 |
Philips Semiconductors
PH5330
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 07 February 2002
8 of 12
9397 750 09391
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj = 25 °C and 150 °C; VGS =0V
Tj =25 °C;ID = 40 A; VDD =10V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ag92
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
VSD (V)
IS
(A)
Tj = 25 C
150 C
VGS = 0 V
03ag94
0
2
4
6
8
10
0
10203040
QG (nC)
VGS
(V)
VDD = 10 V
ID = 40 A
Tj = 25 C
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