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參數(shù)資料
| 型號： | 934056688116 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 934056688116 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100B
Fig.19. Resistive switching.
tf = f(I
C)
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
50
100
200
500
1,000
2,000
5,000
IC /A
tf /ns
IC/IB = 3
IC/IB = 5
IC/IB = 10
Fig.20. Test Circuit for the RBSOA test.
V
cl ≤ 700V; Vcc = 150V; LB = 1H; Lc = 200H
Fig.21. Reverse bias safe operating area T
j ≤ Tjmax
for -V
BE = 9V, 5V,3V & 1V
LB
IBon
-VBB
LC
T.U.T.
VCC
PROBE POINT
VCL(RBSOAR)
0
100
200
300
400
500
600
700
800
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
VCEclamp/V
IC/A
-9V
-5V
-3V
-1V
May 2001
6
Rev 1.000
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