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參數(shù)資料
| 型號： | 934056688116 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 934056688116 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100B
STATIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES,ICBO
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
0.8
100
A
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
2.0
500
A
T
j = 125 C
I
CEO
Collector cut-off current
1
V
CEO = VCEOMmax (350V)
-
100
A
I
EBO
Emitter cut-off current
V
EB = 9 V; IC = 0 A
-
0.05
100
A
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 10 mA;
350
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 1 A; IB = 0.2 A
-
0.27
1.0
V
BEsat
Base-emitter saturation voltage
I
C = 1 A; IB = 0.2 A
-
1.03
1.3
V
h
FE
DC current gain
I
C = 1mA; VCE = 5 V
17
23
-
h
FE
I
C = 100mA; VCE = 5 V
19
30
46
h
FE
I
C = 1.0 A; VCE = 5 V
9
12
19
DYNAMIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 1.0 A; IBon = -IBoff = 0.2 A;
R
L = 75 ohms; VBB2 = 4V;
t
on
Turn-on time
1.0
1.28
s
t
s
Turn-off storage time
1.95
2.61
s
t
f
Turn-off fall time
0.22
0.30
s
Switching times (inductive load)
I
Con = 1.0 A; IBon = 0.2 A; LB = 1 H;
-V
BB = 5 V
t
si
Turn-off storage time
0.55
0.74
s
t
fi
Turn-off fall time
56
76
ns
Switching times (inductive load)
I
Con = 1.0 A; IBon = 0.2 A; LB = 1 H;
-V
BB = 5 V; Tj = 100 C
t
si
Turn-off storage time
-
1.5
s
t
fi
Turn-off fall time
-
140
ns
1 Measured with half sine-wave voltage (curve tracer).
May 2001
2
Rev 1.000
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