參數(shù)資料
型號: 934056688116
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 1 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-92
封裝: PLASTIC, SC-43, 3 PIN
文件頁數(shù): 5/8頁
文件大?。?/td> 57K
代理商: 934056688116
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100B
Fig.13. Inductive switching.
Fig.14. Inductive switching.
tsi = f(h
FE)
tsi = f(I
C)
RESISTIVE SWITCHING
Fig.15. Test circuit resistive load. V
IM = -6 to +8 V
Fig.16. Switching times waveforms with resistive load.
V
CC = 250 V; tp = 20 s; δ = tp / T = 0.01.
R
B and RL calculated from ICon and IBon requirements.
Fig.17. Resistive switching.
Fig.18. Resistive switching.
ton = f(I
C)
ts = f(I
C)
23
45
67
89
10
11
0
0.2
0.4
0.6
0.8
1
HFE GAIN (IC/IB)
tsi /us
IC = 1.5A
IC = 1A
IC = 0.5A
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
0.2
0.4
0.6
0.8
1
IC/A
tsi /us
IC/IB = 3
IC/IB = 5
IC/IB = 10
tp
T
VCC
R
T.U.T.
0
VIM
B
L
IC
IB
10 %
90 %
ton
toff
ts
tf
IBon
-IBoff
ICon
tr
30ns
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
0.5
1
1.5
2
IC/A
ton /us
IC/IB = 10
IC/IB = 5
IC/IB = 3
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
0.5
1
1.5
2
2.5
IC/A
ts us
IC/IB = 3
IC/IB = 5
IC/IB = 10
May 2001
5
Rev 1.000
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