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參數資料
| 型號： | 934056021118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 65 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 13/15頁 |
| 文件大?。?/td> | 296K |
| 代理商： | 934056021118 |
Philips Semiconductors
BUK7516-55A; BUK7616-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 18 January 2001
7 of 15
9397 750 07682
Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60
-20
20
60
100
140
180
V
GS(th)
T
j
(
o
C)
(V)
max.
typ.
min
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
01
23
45
max
typ
min
V
GS
(V)
ID
(A)
03na35
0
5
10
15
20
25
30
35
0
20
40
60
80
100
ID (A)
gfs
(S)
0
500
1000
1500
2000
2500
3000
0.01
0.1
1
10
100
VDS(V)
C (pF)
Ciss
Coss
Crss
03na38
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