參數(shù)資料
型號(hào)： 934055954112
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 放大器
英文描述： 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝： SOT-115J, 7 PIN
文件頁(yè)數(shù)： 7/11頁(yè)
文件大?。?/td> 131K
代理商： 934055954112
2001 Nov 01
5
Philips Semiconductors
Product specication
860 MHz, 20 dB gain power doubler amplier
CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
1000
60
70
90
100
80
52
48
40
36
44
400
600
800
MCD976
(1)
(2)
(3)
(4)
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
ZS =ZL =75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
1000
60
70
90
100
80
52
48
40
36
44
400
600
800
MCD977
(1)
(2)
(3)
(4)
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
ZS =ZL =75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
50
60
80
90
70
52
48
40
36
44
400
600
800
MCD978
(1)
(2)
(3)
(4)
Fig.4
Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
ZS =ZL =75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
1000
50
60
70
80
90
100
54
50
46
42
38
34
200
400
CSO
(dB)
Vo
(dBmV)
f (MHz)
600
800
MCD979
(1)
(2)
(3)
(4)
Fig.5
Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
ZS =ZL =75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
3 σ.
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