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參數(shù)資料
| 型號： | 934055954112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 131K |
| 代理商： | 934055954112 |
2001 Nov 01
3
Philips Semiconductors
Product specication
860 MHz, 20 dB gain power doubler amplier
CGD914; CGD914MI
CHARACTERISTICS
Bandwidth 45 to 870 MHz; VB = 24 V; Tmb =35 °C; ZS =ZL =75 .
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 45 MHz
19.75
20
20.25
dB
f = 870 MHz
20.2
21
21.5
dB
SL
slope straight line
f = 45 to 870 MHz
0.2
1
1.5
dB
FL
atness straight line
f = 45 to 100 MHz
0.25 +0.25 dB
f = 100 to 800 MHz
0.6
+0.4
dB
f = 800 to 870 MHz
0.45
+0.2
dB
atness narrow band
in each 6 MHz segment
±0.1
dB
s11
input return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
20
dB
f = 160 to 320 MHz
18
dB
f = 320 to 550 MHz
16
dB
f = 550 to 650 MHz
15
dB
f = 650 to 750 MHz
14
dB
f = 750 to 870 MHz
14
dB
f = 870 to 914 MHz
10
dB
s22
output return losses
f = 40 to 80 MHz
21
dB
f = 80 to 160 MHz
21
dB
f = 160 to 320 MHz
20
dB
f = 320 to 550 MHz
19
dB
f = 550 to 650 MHz
18
dB
f = 650 to 750 MHz
17
dB
f = 750 to 870 MHz
16
dB
f = 870 to 914 MHz
14
dB
s21
phase response
f = 50 MHz
45
+45
deg
s12
reverse isolation
RFout to RFin
22
dB
CTB
composite triple beat
79 chs; fm = 445.25 MHz; note 1
76
dB
112 chs; fm = 649.25 MHz; note 2
64
dB
132 chs; fm = 745.25 MHz; note 3
55
dB
79 chs at; Vo = 44 dBmV; fm = 547.25 MHz
73
dB
112 chs at; Vo = 44 dBmV; fm = 745.25 MHz 64
dB
132 chs at; Vo = 44 dBmV; fm = 745.25 MHz 60
dB
Xmod
cross modulation
79 chs; fm = 55.25 MHz; note 1
70
dB
112 chs; fm = 55.25 MHz; note 2
62
dB
132 chs; fm = 55.25 MHz; note 3
57
dB
79 chs at; Vo = 44 dBmV; fm = 55.25 MHz
69
dB
112 chs at; Vo = 44 dBmV; fm = 55.25 MHz
65
dB
132 chs at; Vo = 44 dBmV; fm = 55.25 MHz
63
dB
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