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參數資料
| 型號： | 934055954112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數： | 10/11頁 |
| 文件大?。?/td> | 131K |
| 代理商： | 934055954112 |
2001 Nov 01
8
Philips Semiconductors
Product specication
860 MHz, 20 dB gain power doubler amplier
CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
1000
50
60
80
90
70
48
44
36
32
40
400
600
800
MCD988
(1)
(2)
(3)
(4)
Fig.14 Composite triple beat as a function of
frequency under flat conditions.
ZS =ZL =75 ; VB = 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
1000
60
70
90
100
80
48
44
36
32
40
400
600
800
MCD989
(1)
(2)
(3)
(4)
Fig.15 Cross modulation as a function of frequency
under flat conditions.
ZS =ZL =75 ; VB = 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
50
60
80
90
70
48
44
36
32
40
400
600
800
MCD990
(1)
(2)
(3)
(4)
Fig.16 Composite second order distortion (sum) as
a function of frequency under flat
conditions.
ZS =ZL =75 ; VB = 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
50
60
80
90
70
48
44
36
32
40
400
600
800
MCD991
(2)
(1)
(3)
(4)
Fig.17 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
ZS =ZL =75 ; VB = 24 V; 112 chs; flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
3 σ.
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