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參數(shù)資料
| 型號： | 934055918112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 934055918112 |
2001 Oct 30
4
Philips Semiconductors
Product specication
860 MHz, 18.5 dB gain power doubler
amplier
BGD812
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp +fq = 860.5 MHz.
5. Measured according to DIN45004B: fp = 851.25 MHz; Vp =Vo; fq = 858.25 MHz; Vq =Vo 6 dB; fr = 860.25 MHz;
Vr =Vo 6 dB; measured at fp +fq fr = 849.25 MHz.
6. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
CSO
composite second
order distortion
79 chs at; Vo = 44 dBmV; fm = 548.5 MHz
67
dB
112 chs at; Vo = 44 dBmV; fm = 746.5 MHz
60
dB
132 chs at; Vo = 44 dBmV; fm = 860.5 MHz
58
dB
112 chs; fm = 210 MHz;
Vo = 50.2 dBmV at 745 MHz; note 2
57
dB
79 chs; fm = 210 MHz;
Vo = 47.3 dBmV at 547 MHz; note 3
64
dB
d2
second order distortion
note 4
71
dB
Vo
output voltage
dim = 60 dB; note 5
64
dBmV
CTB compression = 1 dB; 132 chs at;
f = 859.25 MHz
48
dBmV
CSO compression = 1 dB; 132 chs at;
f = 860.5 MHz
51
dBmV
NF
noise gure
f = 50 MHz
5.5
dB
f = 550 MHz
5.5
dB
f = 750 MHz
6.5
dB
f = 870 MHz
7.5
dB
Itot
total current
consumption (DC)
note 6
380
395
410
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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