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參數(shù)資料
| 型號(hào)： | 934055918112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | 934055918112 |
2001 Oct 30
3
Philips Semiconductors
Product specication
860 MHz, 18.5 dB gain power doubler
amplier
BGD812
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB = 24 V; Tmb =35 °C; ZS =ZL =75
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 45 MHz
18.2
18.8
dB
f = 870 MHz
19
20
dB
SL
slope straight line
f = 45 to 870 MHz; note 1
0.4
0.9
1.4
dB
FL
atness straight line
f = 45 to 100 MHz
±0.25 dB
f = 100 to 800 MHz
±0.5
dB
f = 800 to 870 MHz
0.3
+0.1
dB
s11
input return losses
f = 45 to 80 MHz
25
dB
f = 80 to 160 MHz
23
dB
f = 160 to 320 MHz
20
dB
f = 320 to 550 MHz
18
dB
f = 550 to 650 MHz
18
dB
f = 650 to 750 MHz
17
dB
f = 750 to 870 MHz
17
dB
f = 870 to 914 MHz
13
dB
s22
output return losses
f = 45 to 80 MHz
23
dB
f = 80 to 160 MHz
22
dB
f = 160 to 320 MHz
18
dB
f = 320 to 550 MHz
18
dB
f = 550 to 650 MHz
16
dB
f = 650 to 750 MHz
15
dB
f = 750 to 870 MHz
15
dB
f = 870 to 914 MHz
14
dB
s21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
79 chs at; Vo = 44 dBmV; fm = 547.25 MHz
66.5 dB
112 chs at; Vo = 44 dBmV; fm = 745.25 MHz 61
dB
132 chs at; Vo = 44 dBmV; fm = 859.25 MHz 57
dB
112 chs; fm = 547.25 MHz;
Vo = 50.2 dBmV at 745 MHz; note 2
56
dB
79 chs; fm = 331.25 MHz;
Vo = 47.3 dBmV at 547 MHz; note 3
66
dB
Xmod
cross modulation
79 chs at; Vo = 44 dBmV; fm = 55.25 MHz
67
dB
112 chs at; Vo = 44 dBmV; fm = 55.25 MHz
64
dB
132 chs at; Vo = 44 dBmV; fm = 55.25 MHz
62
dB
112 chs; fm = 745.25 MHz;
Vo = 50.2 dBmV at 745 MHz; note 2
59
dB
79 chs; fm = 331.25 MHz;
Vo = 47.3 dBmV at 547 MHz; note 3
67
dB
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