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參數(shù)資料
| 型號： | 934055918112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 934055918112 |
2001 Oct 30
2
Philips Semiconductors
Product specication
860 MHz, 18.5 dB gain power doubler
amplier
BGD812
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2, 3
common
5+VB
7, 8
common
9
output
handbook, halfpage
7
8
9
2
35
1
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 45 MHz
18.2
18.8
dB
f = 870 MHz
19
20
dB
Itot
total current consumption (DC)
VB = 24 V
380
410
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
supply voltage
30
V
Vi
RF input voltage
70
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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