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參數(shù)資料
| 型號： | 934055892115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SC-75, SMPAK-3 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 103K |
| 代理商： | 934055892115 |
2000 Apr 03
5
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFR520T
handbook, halfpage
MRC027
10
12
14
16
18
20
010
20
30
GUM
(dB)
IC (mA)
3 V
= 6 V
CE
V
Fig.6
Maximum unilateral power gain as a
function of collector current; typical values.
VCE = 6 V; f = 900 MHz; Tamb =25 °C.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
handbook, halfpage
MRC026
0
5
10
15
20
25
0
102030
MSG
GUM
Gmax
gain
(dB)
IC (mA)
Fig.7
Gain as a function of collector current;
typical values.
VCE = 6 V; f = 2 GHz; Tamb =25 °C.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
handbook, halfpage
MRC024
0
10
20
30
40
50
101
102
110
f (GHz)
MSG
GUM
Gmax
gain
(dB)
Fig.8
Gain as a function of frequency;
typical values.
IC = 5 mA; VCE = 6 V; Tamb =25 °C.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
handbook, halfpage
MRC025
0
10
20
30
40
50
101
102
110
f (GHz)
MSG
GUM
Gmax
gain
(dB)
Fig.9
Gain as a function of frequency;
typical values.
IC = 20 mA; VCE = 6 V; Tamb =25 °C.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
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