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參數(shù)資料
| 型號： | 934055892115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SC-75, SMPAK-3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 934055892115 |
2000 Apr 03
3
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFR520T
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
2. IC = 20 mA; VCE = 6 V; RL =50 ; f = 900 MHz; Tamb =25 °C; fp = 900 MHz; fq = 902 MHz; measured at
f(2pq) = 898 MHz and at f(2qp) = 904 MHz.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCE =6V
50
nA
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
1
pF
Cc
collector capacitance
IE =ie = 0; VCB =6V; f=1MHz
0.5
pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
0.4
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb =25 °C
9
GHz
GUM
maximum unilateral power
gain; note 1
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
15
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb =25 °C
9
dB
s
21
2
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
13
14
dB
F
noise gure
Γs = Γopt;IC = 5 mA; VCE =6V;
f = 900 MHz; Tamb =25 °C
1.1
1.6
dB
Γ
s = Γopt;IC = 20 mA; VCE =6V;
f = 900 MHz; Tamb =25 °C
1.6
2.1
dB
Γ
s = Γopt;IC = 5 mA; VCE =6V;
f = 2 GHz; Tamb =25 °C
1.9
dB
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE =6V; RL =50 ;
f = 900 MHz; Tamb =25 °C
17
dBm
ITO
third order intercept point
note 2
26
dBm
G
UM
10 log
s
21
2
1s
11
2
–
() 1s
22
2
–
()
-------------------------------------------------------- dB
=
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