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參數(shù)資料
| 型號： | 934055892115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SC-75, SMPAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 934055892115 |
2000 Apr 03
2
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFR520T
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT416 (SC-75) package.
APPLICATIONS
Wideband applications such as
satellite TV tuners, cellular phones,
cordless phones, pagers etc., with
signal frequencies up to 2 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
fpage
12
3
MBK090
Top view
Fig.1 SOT416.
Marking code: N2.
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage
RBE =0
15
V
IC
DC collector current
70
mA
Ptot
total power dissipation
up to Ts =75 °C; note 1
150
mW
hFE
DC current gain
IC = 20 mA; VCE =6V; Tj =25 °C
60
120
250
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb =25 °C
9
GHz
GUM
maximum unilateral power
gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
15
dB
F
noise gure
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
1.1
1.6
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage
RBE =0
15
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
DC collector current
70
mA
Ptot
total power dissipation
up to Ts =75 °C; note 1
150
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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