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參數(shù)資料
| 型號： | 934055823115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 934055823115 |
2000 Apr 11
2
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
FEATURES
Two low noise gain controlled amplifiers in a single
package
Specially designed for 5 V applications
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifier for VHF and UHF
applications such as television tuners and professional
communications equipment.
DESCRIPTION
The BF1102 and BF1102R are both two equal dual gate
MOS-FETs which have a shared source pin and a shared
gate 2 pin. Both devices have interconnected source and
substrate; an internal bias circuit enables DC stabilization
and a very good cross-modulation performance at 5 V
supply voltage; integrated diodes between the gates and
source protect against excessive input voltage surges.
Both devices have a SOT363 micro-miniature plastic
package.
PINNING - SOT363
PIN
DESCRIPTION
BF1102
BF1102R
1
gate 1 (1)
2
gate 2 (1 and 2)
source (1 and 2)
3
drain (1)
4
drain (2)
5
source (1 and 2)
gate 2 (1 and 2)
6
gate 1 (2)
handbook, halfpage
MBL029
AMP1
d (1)
g1 (1)
d (2)
g1 (2)
AMP2
g2 (1, 2)
s (1, 2)
13
2
4
5
6
Fig.1 Simplified outline and symbol.
BF1102 marking code: W1.
BF1102R marking code: W2-.
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the source lead.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per MOS-FET unless otherwise specied
VDS
drain-source voltage
7V
ID
drain current (DC)
40
mA
Ptot
total power dissipation
Ts ≤ 102 °C; note 1
200
mW
yfs
forward transfer admittance
ID =15mA
36
43
mS
Cig1-s
input capacitance at gate 1
ID =15mA
2.8
3.6
pF
Crss
reverse transfer capacitance
f = 1 MHz
30
50
fF
F
noise gure
f = 800 MHz
2
2.8
dB
Xmod
cross-modulation
input level for k = 1% at 40 dB AGC 100
dB
V
Tj
operating junction temperature
150
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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