參數(shù)資料
型號: 934055823115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: PLASTIC, SMD, UMT6, SC-88, 6 PIN
文件頁數(shù): 10/16頁
文件大?。?/td> 120K
代理商: 934055823115
2000 Apr 11
3
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET unless otherwise specied
VDS
drain-source voltage
7V
ID
drain current (DC)
40
mA
IG1
gate 1 current
±10
mA
IG2
gate 2 current
±10
mA
Ptot
total power dissipation
Ts ≤ 102 °C
200
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
240
K/W
handbook, halfpage
0
50
100
200
250
0
200
MGS359
150
100
50
Ts (°C)
Ptot
(mW)
Fig.2 Power derating curve.
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