參數(shù)資料
型號(hào): 934055823115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: PLASTIC, SMD, UMT6, SC-88, 6 PIN
文件頁(yè)數(shù): 13/16頁(yè)
文件大小: 120K
代理商: 934055823115
2000 Apr 11
6
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
handbook, halfpage
020
60
25
0
5
20
15
10
MGS364
40
ID
(mA)
IG1 (A)
Fig.7
Drain current as a function of gate 1 current;
typical values.
VDS = 5 V; VG2-S = 4 V; Tj =25 °C.
handbook, halfpage
0
15
10
5
0
1
MGS365
23
5
4
ID
(mA)
VGG (V)
Fig.8
Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
VDS = 5 V; VG2-S = 4 V; Tj =25 °C.
RG1 = 120 k (connected to VGG); see Fig.20.
handbook, halfpage
010
30
0
10
20
MGS366
2468
ID
(mA)
VGG = VDS (V)
RG1 = 47 k
68 k
82 k
100 k
120 k
150 k
180 k
220 k
Fig.9
Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
VG2-S = 4 V; Tj =25 °C.
RG1 connected to VGG; see Fig.20.
handbook, halfpage
02
6
20
0
16
MGS367
4
12
8
4
VG2-S (V)
ID
(mA)
4.5 V
4 V
3.5 V
3 V
VG1-S = 5 V
VDS = 5 V; Tj =25 °C.
RG1 = 120 k (connected to VGG); see Fig.20.
Fig.10 Drain current as a function of gate 2
voltage; typical values.
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