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參數(shù)資料
| 型號： | 934055500118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 324K |
| 代理商： | 934055500118 |
Philips Semiconductors
PHB160N03T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 13 September 2000
2 of 13
9397 750 07325
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 oC
30
V
ID
drain current (DC)
Tmb =25 oC; VGS = 10V
75
A
Ptot
total power dissipation
Tmb =25 oC
230
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS =10V; ID =25A
4.3
5
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 oC
30
V
VDGR
drain-gate voltage (DC)
Tj =25to175 oC; RGS =20k
30
V
VGS
gate-source voltage (DC)
±30
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V;
75
A
Tmb = 100 °C; VGS =10V;
75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
240
A
Ptot
total power dissipation
230
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
75
A
ISM
peak source (diode forward) current
Tmb =25 °C; pulsed; tp ≤ 10 s
240
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load;
ID = 75 A; tp = 0.1 ms;
VDD ≤ 25 V; RGS =50 ;
VGS = 10 V; starting Tj =25 °C
500
mJ
IAS
non-repetitive avalanche current
unclamped inductive load;
VDD ≤ 25 V; RGS =50 ;
VGS = 10 V; starting Tj =25 °C
75
A
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