參數(shù)資料
型號(hào)： 934055500118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁(yè)數(shù)： 13/15頁(yè)
文件大?。?/td> 324K
代理商： 934055500118
Philips Semiconductors
PHB160N03T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 13 September 2000
7 of 13
9397 750 07325
Philips Electronics N.V. 2000. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60
-20
20
60
100
140
180
V
GS(th)
T
j
(
o
C)
(V)
max.
typ.
min
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
01
23
45
max
typ
min
V
GS
(V)
ID
(A)
0
20
40
60
80
100
0
10
20
30
40
50
60
70
80
90
gfs
ID (A)
(S)
03ad24
1
10
0
1
2
3
4
5
6
7
8
9
10
VDS (V)
Ciss
Coss
Crss
Ciss, Coss
Crss
(nF)
03ad25
10
-1
10
-2
10
2
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