參數(shù)資料
型號: 934055500118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 12/15頁
文件大?。?/td> 324K
代理商: 934055500118
Philips Semiconductors
PHB160N03T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 13 September 2000
6 of 13
9397 750 07325
Philips Electronics N.V. 2000. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
6.0
02
4
6
8
10
0
100
200
300
400
ID
(A)
20
12
10
9
8.5
VGS (V) =
8.0
7.5
7.0
6.5
5.0
4.5
VDS (V)
03ad22
100
80
60
40
20
0
ID
(A)
01
2
3
4
5
6
7
VGS (V)
Tj = 175
oC
25
o
C
03ad23
V
DS
> I
D
X R
DSon
0
204060
80
100
3
4
5
6
7
8
9
10
11
RDSon
ID (A)
6 V
7 V
6.5 V
8 V
10 V
(m
)
5.5 V
VGS =
03ad21
03aa27
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25
°C
()
-----------------------------
=
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