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參數(shù)資料
| 型號(hào)： | 934055442118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 6300 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大小： | 135K |
| 代理商： | 934055442118 |
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
PHN203
TrenchMOS
TM transistor
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tp);
unclamped inductive load
012345
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
min
max
PHN203
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Drain-Source Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
PHN203
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
PHN203
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
25 C
VDS
ID
tp
Tj prior to avalanche =125 C
PHN203
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 4A
Tj = 25 C
VDD = 20 V
January 1999
5
Rev 1.000
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