- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24698 > 934055442118 (NXP SEMICONDUCTORS) 6300 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA PDF資料下載
參數(shù)資料
| 型號(hào)： | 934055442118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 6300 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | 934055442118 |
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
PHN203
TrenchMOS
TM transistor
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C, per MOSFET unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source diode
T
a =
25 C
-
2.85
A
current (per MOSFET)
I
SM
Pulsed source diode current
-
25
A
(per MOSFET)
V
SD
Diode forward voltage
I
F = 1.25 A; VGS = 0 V
-
0.75
1
V
t
rr
Reverse recovery time
I
F = 1.25 A; -dIF/dt = 100 A/s;
-
35
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = 25 V
-
24
-
nC
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Ta)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Ta); conditions: VGS ≥ 4.5 V
Fig.3. Safe operating area. T
a = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance;
Z
th j-a = f(t); parameter D = tp/T
Normalised Power Dissipation, PD (%)
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
PHN203
0.01
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
10 s
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
Normalised Drain Current, ID (%)
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
PHN203
0.01
0.1
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Peak Pulsed Drain Current, IDM (A)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
January 1999
3
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934055443115 | 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 934055444115 | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 934055444125 | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 934055444165 | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 934055447127 | 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934055512115 | 制造商:NXP Semiconductors 功能描述:Diode PIN Attenuator/Switch 175V 2-Pin SOD-523 T/R |
| 934055762127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube |
| 934055788118 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R |
| 934056255127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube |
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。