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參數(shù)資料
| 型號： | 934055442118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 6300 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 135K |
| 代理商： | 934055442118 |
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
PHN203
TrenchMOS
TM transistor
FEATURES
SYMBOL
QUICK REFERENCE DATA
Dual device
V
DS = 25 V
Low threshold voltage
Fast switching
I
D = 6.3 A
Logic level compatible
Surface mount package
R
DS(ON) ≤ 30 m (VGS = 10 V)
R
DS(ON) ≤ 55 m (VGS = 4.5 V)
GENERAL DESCRIPTION
PINNING
SOT96-1
N-channel
enhancement
mode
PIN
DESCRIPTION
field-effect power transistor in a
plastic envelope using ’trench’
1
source 1
technology. The device has very
low
on-state
resistance.
It
is
2
gate 1
intended for use in dc to dc
converters and general purpose
3
source 2
switching applications.
4
gate 2
The PHN203 is supplied in the
SOT96-1 (SO8) surface mounting
5,6
drain 2
package.
7,8
drain 1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Repetitive peak drain-source
T
j = 25 C to 150C
-
25
V
voltage
V
DS
Continuous drain-source voltage
-
25
V
DGR
Drain-gate voltage
R
GS = 20 k
-25
V
GS
Gate-source voltage
-
± 20
V
I
D
Drain current per MOSFET
1
T
a = 25 C
-
6.3
A
T
a = 70 C
-
5
A
I
D
Drain current per MOSFET (both
T
a = 25 C
-
4.4
A
MOSFETs conducting)
1
T
a = 70 C
-
3.5
A
I
DM
Drain current per MOSFET (pulse
T
a = 25 C
-
25
A
peak value)
P
tot
Total power dissipation (either or
T
a = 25 C
-
2
W
both MOSFETs conducting)
1
T
a = 70 C
-
1.3
W
T
stg, Tj
Storage & operating temperature
- 55
150
C
d1
g1
s1
d1
d2
g2
d2
s2
12
34
5
6
7
8
pin 1 index
1 Surface mounted on FR4 board, t
≤ 10 sec
January 1999
1
Rev 1.000
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