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Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9515-100A
Logic level FET
BUK9615-100A
Fig.17. Avalanche energy test circuit.
Fig.18. Maximum permissible repetitive avalanche
current(I
AV) versus avalanche time(tAV) for unclamped
inductive loads.
Fig.19. Switching test circuit.
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
RD
T.U.T.
VDD
RG
VDS
+
-
VGS
0
W
DSS = 0.5 LID
2
BV
DSS/(BVDSS VDD)
1
10
100
0.001
0.01
0.1
1
10
Avalanche Time, tAV (ms)
IAV
Tj prior to avanche 150C
25C
November 1999
6
Rev 1.000
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