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參數(shù)資料
| 型號： | 934055416118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 70K |
| 代理商： | 934055416118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9515-100A
Logic level FET
BUK9615-100A
AVALANCHE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D = 35 A; VDD ≤ 25 V;
-
120
mJ
unclamped inductive turn-off
V
GS = 5 V; RGS = 50 ; Tmb = 25 C
energy
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb); conditions: VGS ≥ 5 V
Fig.3. Safe operating area. T
mb = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
0
20
40
60
80
100
120
140
160
180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
100
1
10
100
1000
ID/A
VDS/V
RDS(ON) = VDS/ID
tp =
100mS
10mS
1mS
100uS
1uS
DC
0
20
40
60
80
100
120
140
160
180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.00001
0.001
0.1
10
0.001
0.01
0.1
1
D =
tp
T
P
t
D
Zth / (K/W)
t/S
D =
0.5
0.2
0.1
0.05
0.02
0
November 1999
3
Rev 1.000
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