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參數(shù)資料
| 型號： | 934055416118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 70K |
| 代理商： | 934055416118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9515-100A
Logic level FET
BUK9615-100A
Fig.11. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.12. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.13. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.14. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 25 A; parameter VDS
Fig.15. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.16. Normalised avalanche energy rating.
W
DSS% = f(Tmb); conditions: ID = 75 A
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
10
20304050
60708090
100
110
0
1
2
3
4
5
6
VGS/V
QG/nC
VDS =
14V
80V
0
0.5
1
1.5
2
2.5
3
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
20
40
60
80
100
ID/A
VSDS/V
Tj/C =
175
25
0.01
0.1
1
10
100
0
5
10
15
20
Thousands
VDS/V
Ciss
Coss
Crss
20
40
60
80
100
120
140
160
180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
November 1999
5
Rev 1.000
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