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參數(shù)資料
| 型號(hào)： | 934054620135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 232K |
| 代理商： | 934054620135 |
Philips Semiconductors
PHT6N06T
TrenchMOS standard level FET
Product data
Rev. 02 — 03 February 2003
3 of 12
9397 750 10633
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
VGS ≥ 10 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25 °C; IDM is single pulse; VGS =10V.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
40
80
120
0
50
100
150
200
(%)
Tsp (°C)
Pder
03aa25
0
40
80
120
0
50
100
150
200
Tsp (°C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
003aaa313
10-2
10-1
1
10
102
1
10
102
VDS (V)
ID
DC
Limit RDSon = VDS/ID
(A)
tp = 10 s
100
s
1 ms
10 ms
100 ms
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