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參數(shù)資料
| 型號： | 934054620135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 11/12頁 |
| 文件大小： | 232K |
| 代理商： | 934054620135 |
Philips Semiconductors
PHT6N06T
TrenchMOS standard level FET
Product data
Rev. 02 — 03 February 2003
8 of 12
9397 750 10633
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Tj =25 °C and 150 °C; VGS =0V
ID = 5 A; VDD =44V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
003aaa320
0
10
20
30
40
VSD (V)
IS
3
2
1
0
(A)
Tj = 150 °C
Tj = 25 °C
003aaa331
0
2
4
6
8
10
0246
QG (nC)
VGS
(V)
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