參數(shù)資料
型號(hào)： 934054620135
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SMD, SC-73, 4 PIN
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 232K
代理商： 934054620135
Philips Semiconductors
PHT6N06T
TrenchMOS standard level FET
Product data
Rev. 02 — 03 February 2003
2 of 12
9397 750 10633
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3.
Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j ≤ 150 °C
-
55
V
VDGR
drain-gate voltage (DC)
25
°C ≤ T
j ≤ 150 °C; RGS =20k
-55
V
VGS
gate-source voltage (DC)
-
±20
V
ID
drain current (DC)
Tsp =25 °C; VGS =10V; Figure 2 and 3
-
5.5
A
Tsp = 100 °C; VGS =10V; Figure 2
-
3.8
A
IDM
peak drain current
Tsp =25 °C; pulsed; tp ≤ 10 s; Figure 3
-22
A
Ptot
total power dissipation
Tsp =25 °C; Figure 1
-
8.3
W
Tstg
storage temperature
55
+150
°C
Tj
junction temperature
55
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp =25 °C
-
5.5
A
ISM
peak source (diode forward) current Tsp =25 °C; pulsed; tp ≤ 10 s
-
22
A
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