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參數(shù)資料
| 型號： | 934051110115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SMD, SC-75, SMPAK-3 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 78K |
| 代理商： | 934051110115 |
2000 Nov 15
6
Philips Semiconductors
Product specication
PNP general purpose transistors
BC856T; BC857T series
GRAPHICAL INFORMATION BC857CT
handbook, halfpage
0
400
600
800
1000
hFE
200
MGT719
102
101
1
10
102
103
IC (mA)
(1)
(2)
(3)
Fig.10 DC current gain; typical values.
VCE = 5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT720
101
1
10
102
103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
VCE = 5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
104
103
102
10
MGT721
101
1
10
102
103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT722
101
1
10
102
103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
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