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參數(shù)資料
| 型號： | 934051110115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SMD, SC-75, SMPAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 78K |
| 代理商： | 934051110115 |
2000 Nov 15
2
Philips Semiconductors
Product specication
PNP general purpose transistors
BC856T; BC857T series
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification, especially
in portable equipment.
DESCRIPTION
PNP transistor in an SC-75 (SOT416) plastic package.
NPN complements: BC846T; BC847T series.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BC856AT
3A
BC856BT
3B
BC857AT
3E
BC857BT
3F
BC857CT
3G
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
MAM362
1
2
3
Top view
12
3
Fig.1
Simplified outline (SC-75; SOT416) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BC856AT; BC856BT
80
V
BC857AT; BC857BT; BC857CT
50
V
VCEO
collector-emitter voltage
open base
BC856AT; BC856BT
65
V
BC857AT; BC857BT; BC857CT
45
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
150
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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