參數(shù)資料
型號(hào): 934047470115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, CMPAK-4
文件頁數(shù): 7/12頁
文件大?。?/td> 111K
代理商: 934047470115
1998 Mar 11
4
Philips Semiconductors
Product specication
NPN 25 GHz wideband transistor
BFG425W
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8.
2. ZS is optimized for noise; ZL is optimized for gain.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 2.5 A; IE =0
10
V
V(BR)CEO
collector-emitter breakdown voltage
IC = 1 mA; IB = 0
4.5
V
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 A; IC =0
1
V
ICBO
collector-base leakage current
IE = 0; VCB = 4.5 V
15
nA
hFE
DC current gain
IC = 25 mA; VCE = 2 V; see Fig.3
50
80
120
Cc
collector capacitance
IE =ie = 0; VCB = 2 V; f = 1 MHz
300
fF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
575
fF
Cre
feedback capacitance
IC = 0; VCB = 2 V; f = 1 MHz;
see Fig.4
95
fF
fT
transition frequency
IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb =25 °C; see Fig.5
25
GHz
Gmax
maximum power gain; note 1
IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb =25 °C; see Figs 7 and 8
20
dB
insertion power gain
IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb =25 °C; see Fig.8
17
dB
F
noise gure
IC = 2 mA; VCE = 2 V; f = 900 MHz;
ΓS = Γopt; see Fig.13
0.8
dB
IC = 2 mA; VCE = 2 V; f = 2 GHz;
ΓS = Γopt; see Fig.13
1.2
dB
PL1
output power at 1 dB gain
compression
IC = 25 mA; VCE = 2 V; f = 2 GHz;
ZS =ZS opt; ZL =ZL opt; note 2
12
dBm
ITO
third order intercept point
IC = 25 mA; VCE = 2 V; f = 2 GHz;
ZS =ZS opt; ZL =ZL opt; note 2
22
dBm
S
21
2
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