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參數(shù)資料
| 型號(hào)： | 934049750127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TOP-3D, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | 934049750127 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand V
CES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1700
V
I
C
Collector current (DC)
-
12
A
I
CM
Collector current peak value
-
30
A
P
tot
Total power dissipation
T
hs ≤ 25 C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C = 7.0 A; IB = 1.75 A
-
1.0
V
I
Csat
Collector saturation current
f = 16 kHz
7.0
-
A
t
s
Storage time
I
Csat = 7.0 A; f = 16kHz
5.8
6.5
s
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1700
V
I
C
Collector current (DC)
-
12
A
I
CM
Collector current peak value
-
30
A
I
B
Base current (DC)
-
12
A
I
BM
Base current peak value
-
20
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
200
mA
-I
BM
Reverse base current peak value
1
-9
A
P
tot
Total power dissipation
T
hs ≤
25 C
-
45
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
ESD LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor voltage Human body model (250 pF,
-
10
kV
1.5 k
)
case
12 3
b
c
e
Rbe
1 Turn-off current.
August 2002
1
Rev 2.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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