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參數(shù)資料
| 型號(hào)： | 934047470115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, CMPAK-4 |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | 934047470115 |
1998 Mar 11
9
Philips Semiconductors
Product specication
NPN 25 GHz wideband transistor
BFG425W
SPICE parameters for the BFG425W die
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
47.17
aA
2
BF
145.0
3
NF
0.993
4
VAF
31.12
V
5
IKF
304.0
mA
6
ISE
300.2
fA
7
NE
3.000
8
BR
11.37
9
NR
0.985
10
VAR
1.874
V
11
IKR
0.121
A
12
ISC
484.8
aA
13
NC
1.546
14
RB
14.41
15
IRB
0.000
A
16
RBM
6.175
17
RE
177.9
m
18
RC
1.780
19 (1)
XTB
1.500
20 (1)
EG
1.110
eV
21 (1)
XTI
3.000
22
CJE
310.9
fF
23
VJE
900.0
mV
24
MJE
0.346
25
TF
4.122
ps
26
XTF
68.20
27
VTF
2.004
V
28
ITF
1.525
A
29
PTF
0.000
deg
30
CJC
137.7
fF
31
VJC
556.9
mV
32
MJC
0.207
33
XCJC
0.500
34 (1)
TR
0.000
ns
35 (1)
CJS
667.5
fF
36 (1)
VJS
418.3
mV
37 (1)
MJS
0.239
38
FC
0.550
Notes
1. These parameters have not been extracted, the
default values are shown.
2. Bonding pad capacity Cbp in series with substrate
resistance Rsb1 between B′ and E′.
3. Bonding pad capacity Cbp in series with substrate
resistance Rsb2 between C′ and E′.
List of components (see Fig.14)
Note
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.
39 (2)(3)
Cbp
145
fF
40 (2)
Rsb1
25
41 (3)
Rsb2
19
DESIGNATION
VALUE
UNIT
Cbe
80
fF
Ccb
2fF
Cce
80
fF
L1
1.1
nH
L2
1.1
nH
L3 (note 1)
0.25
nH
SEQUENCE No.
PARAMETER
VALUE
UNIT
QLB = 50; QLE = 50; QLB,E(f)=QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT343R2.
handbook, halfpage
MGD956
B
E
C
B'
C'
E'
L3
L1
L2
C cb
Cbe
ce
C
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